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Samsung Unveils Next-Gen 3D-Memory Vision at FMS 2026, Charting the Future of AI Infrastructure

Samsung Unveils Next-Gen 3D-Memory Vision at FMS 2026, Charting the Future of AI Infrastructure

Samsung Newsroom
August 5, 2026

 

Samsung Electronics a global leader in advanced memory technology, today showcased its latest AI memory innovations at Future of Memory and Storage (FMS) 2026 in Santa Clara, California.

With broad expertise spanning DRAM, NAND, enterprise storage and relevant advanced semiconductor technologies, Samsung presented its latest AI memory portfolio and technology roadmap, including a preview of its zHBM and zNAND-O concept models, the industry-first introduction of its V10 BV-NAND with 400-plus layers and a comprehensive range of solutions designed to advance future AI infrastructure. Samsung is also featuring its AI cloud server-inspired booth at FMS 2026, where approximately 30 memory and storage technologies are on display.  

At the opening keynote event, Samsung’s Memory Business executives Jin-Yub Lee, Executive Vice President and Head of Flash Product & Technology and Kyungryun Kim, Vice President and Project Leader of the DRAM Design Team, delivered their address on next-generation 3D structures in future memory solutions.

Titled “Driving the Wave of AI Revolution: 3D Innovations in Memory & Storage Architecture,” the keynote presented Samsung’s vision to maximize AI system performance and power efficiency while addressing the rapidly growing demands of high-performance computing (HPC) and AI infrastructure.

The company also unveiled V10 BV-NAND, an architecture enabled by a new wafer bonding technology — for the first time in the industry.

 

Related Link:Samsung Unveils Next-Gen 3D-Memory Vision at FMS 2026

 

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