LP Treatment Series
RIE Low-Pressure Reactive Ion Etching System
Production Description
◆ Supports high-density ICP plasma source for anisotropic precision etching
◆ Gas distribution plate ensures exceptional process uniformity
◆ Fully compatible with EFEM and SECS/GEM for automated mass production
◆ Suitable for 4"–12" wafers and 300mm×300mm panels
◆ Gas distribution plate ensures exceptional process uniformity
◆ Fully compatible with EFEM and SECS/GEM for automated mass production
◆ Suitable for 4"–12" wafers and 300mm×300mm panels
Product Features
- Semiconductors, wafer/panel-level packaging, IC substrates, Micro-LED
- CoWoS packaging technology
- TGV (Through-Glass Via) processes
- Photoresist ashing, stripping, residue and organic contamination removal
- Etching of Si, Poly-Si, SiO₂, and SiN